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EPI Products

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Item	Characteristics	Maximum Limit	Test Method
1	Dopant	P,P+:Boron N,N+:Phosphorus, Arsine
2	Orientation	<100>,<111>
3	Resistivity	P,N:10^-1 ~ 10²ohm.cm	ASTM F723
4	Resistivity Variation	<=±5%	For 6'
5	Resistivity Uniformity	<=±3%	For 6'
6	Layer Thickness	1 to 100 Micrometer	ASTM F95, F110
7	Thickness Variation	<=±5%	For 6'
8	Resistivity Uniformity	<=±3%	For 6'
9	Stacking Faults	10/cm²	ASTM F1810
10	Slip	5 lines, total length not toexceed semidiameter	ASTM F1725 F1726
11	Haze	NONE	ASTM F523
12	Scratches	NONE	ASTM F523
13	Craters, Orange Peel, Cracks, Crow's Feet	NONE	ASTM F523
14	Edge Chips	NONE	ASTM F523
15	Edge Crown	Projection above wafer surface not to exceed 1/3 of Epi layer thickness	To be defined
16	Foreign Matter	NONE	ASTM F523
17	Back Surface Contamination	NONE	ASTM F523
18	Point defects	SEMI Standard	ASTM F523

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Simgui adopts four processes: SIMOX, BONDING, SIMBOND, and SSS, and uses advanced equipment to prepare SOI materials to ensure that wafers can meet international semiconductor standards and meet the requirements of mainstream IC production lines in the world today. Relying on strong and continuous technical support, integrating the good cost-effectiveness of domestically produced substrates and the advantages of strong and flexible processing capabilities, we provide professional epitaxial services to customers.