·Comparison of Cu gettering to H+ and He+ implantation-induced cavities in separation-by-implantation-of-oxygen wafers
·Gettering of Cu by microcavities in bonded/ion-cut silicon-on-insulator and separation by implantation of oxygen
·Dose-energy match for the formation of high-integrity buried oxide layers in low-dose separation-by-implantation-of-oxygen materials
·Relaxed siliconCgermanium-on-insulator substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure
·Evolution of hydrogen and helium co-implanted single-crystal silicon during annealing
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