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SOI is the abbreviation for Silicon-on-insulator, a structure where a thin silicon layer lies atop an insulator, such as silicon dioxide, that may be a silicon or other substrate. This allows for isolation of the active silicon layer containing circuit structures from the bulk substrate (or handle wafer), permitting improved device performance for CMOS devices and more flexible integration schemes for electronic, MEMS and MOEMS devices.


 

Simgui adopts four processes: SIMOX, BONDING, SIMBOND, and SSS, and uses advanced equipment to prepare SOI materials to ensure that wafers can meet international semiconductor standards and meet the requirements of mainstream IC production lines in the world today. Relying on strong and continuous technical support, integrating the good cost-effectiveness of domestically produced substrates and the advantages of strong and flexible processing capabilities, we provide professional epitaxial services to customers.
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